*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 12.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1706 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
13,169
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Diodes Incorporated's DMN2009USS-13 is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 12.1A (Ta), a drive voltage of 2.5V, 10V and a rds on (max) @ id, vgs of 8mOhm @ 12A, 10V. This part has a typical lead time of 280 Days from factory. You can source DMN2009USS-13 through Simplytronix, with fast shipping and verified authenticity.
