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DMN1003UFDE-13

MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2551 pF @ 6 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,297
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
TARIC 8541290000
ECCN EAR99
Product Overview

The DMN1003UFDE-13 from Diodes Incorporated falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 12 V, a current, continuous drain (id) @ 25°C of 22A (Ta), a drive voltage of 2.5V, 4.5V and a rds on (max) @ id, vgs of 3mOhm @ 15A, 4.5V. This part has a typical lead time of 280 Days from factory. You can source DMN1003UFDE-13 through Simplytronix, with fast shipping and verified authenticity.

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