*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N and 2 P-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.3A |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1167pF @ 25V |
| Power - Max | 2.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 12-VDFN Exposed Pad |
| Supplier Device Package | V-DFN5045-12 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,006
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 84 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Diodes Incorporated, the DMHC10H170SFJ-13 is classified as a mosfets. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N and 2 P-Channel (Full Bridge), a FET feature of -, a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 2.9A, 2.3A and a rds on (max) @ id, vgs of 160mOhm @ 5A, 10V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries DMHC10H170SFJ-13 in stock, backed by a genuine parts guarantee and quick dispatch.
