*For representation only.
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1066.4pF @ 15V |
| Power - Max | 980mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-VFDFN Exposed Pad |
| Supplier Device Package | W-DFN5020-6 |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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In Stock
Packaging: Reel
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 84 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
Product Overview
DMG5802LFX-7 by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
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