Similar Products
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta), 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA, 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V, 7.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V, 336pF @ 25V |
| Power - Max | 800mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-6 (Type B) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Diodes Incorporated, the DMC3032LFDB-7 is classified as a mosfets. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel Complementary, a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 5.3A (Ta), 3.4A (Ta) and a rds on (max) @ id, vgs of 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries DMC3032LFDB-7 in stock, backed by a genuine parts guarantee and quick dispatch.
