Similar Products
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel, Common Drain (Complementary) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta), 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V, 120mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V, 5.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 281pF @ 10V, 476pF @ 10V |
| Power - Max | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PowerDI3333-8 (Type UXB) |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Diodes Incorporated's DMC2058UNS-7 is a widely used mosfets in electronic designs. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel, Common Drain (Complementary), a FET feature of -, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 5.6A (Ta), 3.1A (Ta) and a rds on (max) @ id, vgs of 35mOhm @ 6A, 10V, 120mOhm @ 2.8A, 4.5V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DMC2058UNS-7 for same-day shipping with genuine parts guaranteed.
