*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V, 50V |
| Current - Continuous Drain (Id) @ 25°C | 115mA, 130mA |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V, 45pF @ 25V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,203
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
The BSS8402DW-7-F from Diodes Incorporated falls under the mosfets category. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel Complementary, a FET feature of Logic Level Gate, a drain to source voltage of 60V, 50V, a current, continuous drain (id) @ 25°C of 115mA, 130mA and a rds on (max) @ id, vgs of 7.5Ohm @ 50mA, 5V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BSS8402DW-7-F in stock, backed by a genuine parts guarantee and quick dispatch.
