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BC856AFSW-7

Bipolar Transistors - BJT General Purpose Transistor U-DFN1412-3 T&R 5K
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V
Power - Max 450 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount, Wettable Flank
Package / Case 3-UDFN
Supplier Device Package U-DFN1412-3/SWP (Type A)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,890
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210075
TARIC 8541210000
ECCN EAR99
Product Overview

Diodes Incorporated's BC856AFSW-7 is a widely used bipolar transistors - bjt in electronic designs. It features a transistor type of PNP, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 65 V, a vce saturation (max) @ ib, ic of 650mV @ 5mA, 100mA, a current, collector cutoff of 15nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 125 @ 2mA, 5V. This part has a typical lead time of 280 Days from factory. You can source BC856AFSW-7 through Simplytronix, with fast shipping and verified authenticity.

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