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2N4416A TIN/LEAD

JFETs N-Ch 35Vgd 35Vgs 35Vds 10mA 300mW
Technical Specifications
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V
Drain to Source Voltage (Vdss) 35 V
Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 2.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 15V
Power - Max 300 mW
Operating Temperature -65°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-206AF, TO-72-4 Metal Can
Supplier Device Package TO-72
Product Attributes
Packaging Bulk
Standard Pack Qty2000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,554
In Stock
Packaging: Bulk
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryJFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 462 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

2N4416A TIN/LEAD by Central Semiconductor is a jfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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