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AS4C8M16MSB-6BIN

Alliance Memory Last Time Buy
DRAM LPSDRAM, 128M 8M X 16, 1.8V, 54 BALL, BGA, 8X16MM, 166MHZ INDUSTRIAL TEMP, B Die
Technical Specifications
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile SDRAM
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface LVCMOS
Clock Frequency 166 MHz
Write Cycle Time - Word, Page 15ns
Access Time 5.5 ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TFBGA
Supplier Device Package 54-FBGA (8x8)
Product Attributes
Packaging Tray
Standard Pack Qty319
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,641
In Stock
Packaging: Tray
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDRAM
RoHS
LifecycleNew Product
Reported Lead Time 112 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
USHTS 8542391000
ECCN EAR99
Product Overview

AS4C8M16MSB-6BIN by Alliance Memory is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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