SICFET N-CH 1.2KV 19A TO247-3

Part Number: 448-IMW120R140M1HXKSA1-ND

Manufacturer Product Number: IMW120R140M1HXKSA1

Description: N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-3-41

Manufacturer: Infineon Technologies

Product Status: Active

Data Sheet: Download PDF

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Type	Description
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	182mOhm @ 6A, 18V
Vgs(th) (Max) @ Id	5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	454 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3

Part Number: 448-IMW120R140M1HXKSA1-ND

Manufacturer Product Number: IMW120R140M1HXKSA1

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