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SICFET N-CH 1700V 4A TO-220-3

Part Number: 4237-P3M173K0T3-ND

Manufacturer Product Number: P3M173K0T3

Description: N-Channel 1700 V 4A 75W Through Hole TO-220-2L

Manufacturer: PN Junction Semiconductor

Product Status: Active

Data Sheet: Download PDF

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Type	Description
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	4A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	2.6Ohm @ 600mA, 15V
Vgs(th) (Max) @ Id	2.2V @ 600µA (Typ)
Vgs (Max)	+19V, -8V
FET Feature	-
Power Dissipation (Max)	75W
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-2L
Package / Case	TO-220-2

Part Number: 4237-P3M173K0T3-ND

Manufacturer Product Number: P3M173K0T3