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SICFET N-CH 1200V 112A TO-247-4

Part Number: 4237-P3M12025K4-ND

Manufacturer Product Number: P3M12025K4

Description: N-Channel 1200 V 112A 577W Through Hole TO-247-4L

Manufacturer: PN Junction Semiconductor

Product Status: Active

Data Sheet: Download PDF

In-Stock: 404

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Type Description
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 112A
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 35mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 2.2V @ 50mA (Typ)
Vgs (Max) +19V, -8V
FET Feature -
Power Dissipation (Max) 577W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Attribute Description
ReachStatus REACH Affected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel
ExportControlClassNumber
HtsusCode

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SICFET N-CH 1200V 112A TO-247-4

Part Number: 4237-P3M12025K4-ND

Manufacturer Product Number: P3M12025K4