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SICFET N-CH 650V 46A TO220-3

Part Number: 4237-P3M06060T3-ND

Manufacturer Product Number: P3M06060T3

Description: N-Channel 650 V 46A 170W Through Hole TO-220-2L

Manufacturer: PN Junction Semiconductor

Product Status: Active

Data Sheet: Download PDF

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Type	Description
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	46A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	79mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	2.2V @ 20mA (Typ)
Vgs (Max)	+20V, -8V
FET Feature	-
Power Dissipation (Max)	170W
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	TO-220-2L
Package / Case	TO-220-2

Part Number: 4237-P3M06060T3-ND

Manufacturer Product Number: P3M06060T3