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SIC MOSFET,TO-247AB

Part Number: 353-SICW025N120H-BP-ND

Manufacturer Product Number: SICW025N120H-BP

Description: N-Channel 1200 V 86A (Tc) 375W (Tc) Through Hole TO-247AB

Manufacturer: MCC (Micro Commercial Components)

Product Status: Active

Data Sheet: Download PDF

In-Stock: 404

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Type Description
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 33mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 4.5V @ 50mA
Gate Charge (Qg) (Max) @ Vgs 305 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4909 pF @ 800 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3
Attribute Description
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber EAR99
HtsusCode 8541.29.0095

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