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DIODE SIL CARB 650V 11.5A TO252

Part Number: 3383-G3S06504C-ND

Manufacturer Product Number: G3S06504C

Description: Diode 650 V 11.5A Surface Mount TO-252

Manufacturer: Global Power Technology-GPT

Product Status: Active

Data Sheet: Download PDF

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Type	Description
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	11.5A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Capacitance @ Vr, F	181pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package	TO-252
Operating Temperature - Junction	-55°C ~ 175°C

Part Number: 3383-G3S06504C-ND

Manufacturer Product Number: G3S06504C