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SiC MOSFET N 1200V 75mohm 47A 4

Part Number: 3372-NC1M120C75HTNG-ND

Manufacturer Product Number: NC1M120C75HTNG

Description: N-Channel 1200 V 47A (Tc) 288W (Ta) Through Hole TO-247-4L

Manufacturer: NovuSem

Product Status: Active

Data Sheet: Download PDF

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Type	Description
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	75mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	2.8V @ 5mA
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1450 pF @ 1000 V
Power Dissipation (Max)	288W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4

Part Number: 3372-NC1M120C75HTNG-ND

Manufacturer Product Number: NC1M120C75HTNG