*For representation only.
WAS110M12BM2
Wolfspeed
Not For New Designs
Discrete Semiconductor Modules BM2, 1200V, 110A SiCHalf-Bridge Module
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 183A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 30mA |
| Gate Charge (Qg) (Max) @ Vgs | 322nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 800V |
| Power - Max | 723W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 1 |
14,304
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
WAS110M12BM2 is a discrete semiconductor modules manufactured by Wolfspeed. It features a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 183A (Tc) and a rds on (max) @ id, vgs of 17mOhm @ 100A, 20V. This part has a typical lead time of 0 Days from factory. You can source WAS110M12BM2 through Simplytronix, with fast shipping and verified authenticity.
