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E3M0021120U2-TR

SiC, MOSFET,21mO,1200V, TSC (U2) , Automotive
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 29mOhm @ 62.12A, 15V
Vgs(th) (Max) @ Id 3.8V @ 17.08mA
Gate Charge (Qg) (Max) @ Vgs 179 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 5670 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package U2PAK
Package / Case TO-263-9 (7 Leads + 2 Tabs)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,188
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS
Lifecycle New Product
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290095
ECCN EAR99
Product Overview

E3M0021120U2-TR is a component manufactured by Wolfspeed. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 116A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 29mOhm @ 62.12A, 15V. This part has a typical lead time of 0 Days from factory. Simplytronix carries E3M0021120U2-TR in stock, backed by a genuine parts guarantee and quick dispatch.

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