| Diode Configuration | 1 Pair Series Connection |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 908A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 600 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 160 µA @ 1.2 kV |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Packaging | |
| Standard Pack Qty | 1 |
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
The CAR600M12HN6T from Wolfspeed falls under the mosfet modules category. This component is defined by a diode configuration of 1 Pair Series Connection, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 908A, a voltage, forward (vf) (max) @ if of 1.5 V @ 600 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries CAR600M12HN6T in stock, backed by a genuine parts guarantee and quick dispatch.