| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 2300V (2.3kV) |
| Current - Continuous Drain (Id) @ 25°C | 150A |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 160A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 76mA |
| Gate Charge (Qg) (Max) @ Vgs | 590nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 24400pF @ 1500V |
| Power - Max | 510W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | |
| Standard Pack Qty | 18 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 307 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
CAB7R5A23GM4 is a discrete semiconductor modules manufactured by Wolfspeed. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 2300V (2.3kV), a current, continuous drain (id) @ 25°C of 150A and a rds on (max) @ id, vgs of 10.5mOhm @ 160A, 15V. This part has a typical lead time of 307 Days from factory and ships with a full manufacturer datasheet available for download. You can source CAB7R5A23GM4 through Simplytronix, with fast shipping and verified authenticity.