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CAB016M12FM3 Wolfspeed
*For representation only.

CAB016M12FM3

Discrete Semiconductor Modules 1B Half Bridge 33.8mm
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 78A
Rds On (Max) @ Id, Vgs 21.3mOhm @ 80A, 15V
Vgs(th) (Max) @ Id 3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs 236nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 18
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,127
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS No
Lifecycle
Lead Time 20 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
USHTS 8541210095
ECCN EAR99
Product Overview

The CAB016M12FM3 from Wolfspeed falls under the discrete semiconductor modules category. It features a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 78A and a rds on (max) @ id, vgs of 21.3mOhm @ 80A, 15V. This part has a typical lead time of 20 Days from factory. Simplytronix stocks CAB016M12FM3 for same-day shipping with genuine parts guaranteed.

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