*For representation only.
CAB006A12GM4T
Wolfspeed
Active
MOSFET Modules SiC, Module, 6mO, 1200V, 48 mm, AlN GM4, Half-Bridge, Industrial, Pre-Applied TIM
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 180A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 56mA |
| Gate Charge (Qg) (Max) @ Vgs | 858nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 19800pF @ 800V |
| Power - Max | 680W |
| Operating Temperature | -40°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
📦
Product Attributes
| Packaging | |
| Standard Pack Qty | 18 |
8,778
Units In Stock
📦
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
ℹ
Product Overview
CAB006A12GM4T is a mosfet modules manufactured by Wolfspeed. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 200A and a rds on (max) @ id, vgs of 6.9mOhm @ 180A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source CAB006A12GM4T through Simplytronix, with fast shipping and verified authenticity.
