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W9412G6KH-5

Winbond Active
DRAM 128Mb DDR SDRAM x16 200MHz, 46nm
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface SSTL_2
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns
Access Time 50 ns
Voltage - Supply 2.3V ~ 2.7V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP II
Product Attributes
Packaging Tray
Standard Pack Qty108
Alternate / Replacement Parts
Alternate Packaging W9412G6KH-5 TR
Suggested Replacement
8,811
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDRAM
RoHSRoHS Compliant
LifecycleVerify Status with Factory
Reported Lead Time 365 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8542320020
USHTS 8542320002
MXHTS 8542320299
ECCN EAR99
Product Overview

W9412G6KH-5 by Winbond is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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