*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Power - Max | 75 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 1000 |
9,340
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
PHE13005,127 is a bipolar transistors - bjt manufactured by WeEn Semiconductors. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 4 A, a voltage, collector emitter breakdown of 400 V, a vce saturation (max) @ ib, ic of 1V @ 1A, 4A, a current, collector cutoff of 100µA and a DC current gain (hfe) (min) @ ic, vce of 10 @ 2A, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source PHE13005,127 through Simplytronix, with fast shipping and verified authenticity.
