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VS-SC80FA65 Vishay
*For representation only.

VS-SC80FA65

SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 80 A
Technical Specifications
Diode Configuration 2 Independent
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 40A
Voltage - Forward (Vf) (Max) @ If 1.58 V @ 40 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,428
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Vishay's VS-SC80FA65 is a widely used sic schottky diodes in electronic designs. Notable characteristics of this part include a diode configuration of 2 Independent, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 40A, a voltage, forward (vf) (max) @ if of 1.58 V @ 40 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory. Order VS-SC80FA65 from Simplytronix for authenticated stock and same-day order processing.

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