*For representation only.
VS-SC40FA120
Vishay
Active
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 40 A
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Technical Specifications
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.58 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 10 |
9,591
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
VS-SC40FA120 is a sic schottky diodes manufactured by Vishay. This component is defined by a diode configuration of 2 Independent, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 20A, a voltage, forward (vf) (max) @ if of 1.58 V @ 20 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory. You can source VS-SC40FA120 through Simplytronix, with fast shipping and verified authenticity.
