*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA, 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V, 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 15V, 650pF @ 15V |
| Power - Max | 16W, 16.7W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-Power33 (3x3) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,221
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
SIZ346DT-T1-GE3 is a mosfets manufactured by Vishay / Siliconix. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of - and a drain to source voltage of 30V. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SIZ346DT-T1-GE3 for same-day shipping with genuine parts guaranteed.
