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IRFR120TRRPBF-BE3 Vishay / Siliconix
*For representation only.

IRFR120TRRPBF-BE3

MOSFETs TO252 100V 7.7A N-CH MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging IRFR120TRRPBF
Suggested Replacement
10,433
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

IRFR120TRRPBF-BE3 is a mosfets manufactured by Vishay / Siliconix. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V and a current, continuous drain (id) @ 25°C of 7.7A (Tc). This part has a typical lead time of 0 Days from factory. Simplytronix stocks IRFR120TRRPBF-BE3 for same-day shipping with genuine parts guaranteed.

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