*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 92mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
| Power - Max | 27W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,173
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
SQJB68EP-T1_GE3 is a mosfets manufactured by Vishay / Siliconix. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 11A (Tc), a rds on (max) @ id, vgs of 92mOhm @ 4A, 10V and a vgs(th) (max) @ id of 2.5V @ 250µA. This part has a typical lead time of 0 Days from factory. Order SQJB68EP-T1_GE3 from Simplytronix for authenticated stock and same-day order processing.
