| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19.7nC @ 10V, 33.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 809pF @ 20V, 1451pF @ 20V |
| Power - Max | 17W, 48W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The SQJ942EP-T1_GE3 from Vishay / Siliconix falls under the mosfets category. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 40V, a current, continuous drain (id) @ 25°C of 15A (Tc), 45A (Tc) and a rds on (max) @ id, vgs of 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SQJ942EP-T1_GE3 for same-day shipping with genuine parts guaranteed.