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SQ2348ES-T1_BE3 Vishay / Siliconix
*For representation only.

SQ2348ES-T1_BE3

MOSFETs N-CHANNEL 30V (D-S)
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging SQ2348ES-T1_GE3
Suggested Replacement
3,177
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

Vishay / Siliconix's SQ2348ES-T1_BE3 is a widely used mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 8A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 24mOhm @ 12A, 10V. This part has a typical lead time of 0 Days from factory. You can source SQ2348ES-T1_BE3 through Simplytronix, with fast shipping and verified authenticity.

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