*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,037
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8542390000 |
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| MXHTS | 8542399901 |
| ECCN | EAR99 |
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Product Overview
The SQ1912AEEH-T1_GE3 from Vishay / Siliconix falls under the mosfets category. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 800mA (Tc) and a rds on (max) @ id, vgs of 280mOhm @ 1.2A, 4.5V. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SQ1912AEEH-T1_GE3 for same-day shipping with genuine parts guaranteed.
