*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V, 77nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 15V, 3350pF @ 15V |
| Power - Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 3000 |
9,860
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 16 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Vishay / Siliconix's SIZF918BDT-T1-GE3 is a widely used mosfets in electronic designs. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc) and a rds on (max) @ id, vgs of 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V. This part has a typical lead time of 16 Days from factory. Order SIZF918BDT-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.
