*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7872 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 595W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 500 |
7,154
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| TARIC | 8541290000 |
ℹ
Product Overview
The SIHG033N60SF-GE3 from Vishay / Siliconix falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 87A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 33mOhm @ 35A, 10V. This part has a typical lead time of 140 Days from factory. Simplytronix carries SIHG033N60SF-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
