*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 10V |
| Power - Max | 420mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | SI1902CDL-T1-BE3 |
| Suggested Replacement | SI1902CDL-T1-BE3 |
8,925
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 58 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
SI1902CDL-T1-GE3 is a mosfets manufactured by Vishay Semiconductors. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 1.1A and a rds on (max) @ id, vgs of 235mOhm @ 1A, 4.5V. This part has a typical lead time of 58 Days from factory. You can source SI1902CDL-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.
