| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Standard Pack Qty | 1000 |
| Alternate Packaging | IRL640PBF-BE3 |
| Suggested Replacement | IRL640PBF-BE3 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 18 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Vishay Semiconductors, the IRL640PBF is classified as a mosfets. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V, a current, continuous drain (id) @ 25°C of 17A (Tc), a drive voltage of 4V, 5V and a rds on (max) @ id, vgs of 180mOhm @ 10A, 5V. This part has a typical lead time of 18 Days from factory. Simplytronix carries IRL640PBF in stock, backed by a genuine parts guarantee and quick dispatch.