*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
🔁
Alternate / Replacement Parts
| Alternate Packaging | IRF530PBF-BE3 |
| Suggested Replacement | IRF530PBF-BE3 |
13,067
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 22 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Vishay Semiconductors, the IRF530PBF is classified as a mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 14A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 160mOhm @ 8.4A, 10V. This part has a typical lead time of 22 Days from factory. You can source IRF530PBF through Simplytronix, with fast shipping and verified authenticity.
