*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 6V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
11,055
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 47 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
SIA910EDJ-T1-GE3 is a mosfets manufactured by Vishay Semiconductors. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate and a drain to source voltage of 12V. This part has a typical lead time of 47 Days from factory. Simplytronix stocks SIA910EDJ-T1-GE3 for same-day shipping with genuine parts guaranteed.
