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VS-GT100TS065N Vishay Semiconductors
*For representation only.

VS-GT100TS065N

IGBT Modules Modules IGBT - IAP IGBT
Technical Specifications
IGBT Type Trench Field Stop
Configuration Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 96 A
Power - Max 259 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 100A
Current - Collector Cutoff (Max) 50 µA
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package INT-A-PAK IGBT
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 15
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,873
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 107 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Vishay Semiconductors, the VS-GT100TS065N is classified as an igbt modules. This component is defined by a IGBT type of Trench Field Stop, a configuration of Half Bridge Inverter, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 96 A, a power, max of 259 W and a vce(on) (max) @ vge, ic of 2.3V @ 15V, 100A. This part has a typical lead time of 107 Days from factory and ships with a full manufacturer datasheet available for download. Order VS-GT100TS065N from Simplytronix for authenticated stock and same-day order processing.

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