*For representation only.
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | 1050pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
7,916
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | PIN Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
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Product Overview
The VS-C20ET07T-M3 from Vishay Semiconductors falls under the pin diodes category. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 20A, a voltage, forward (vf) (max) @ if of 1.7 V @ 20 A, a speed of Fast Recovery =< 500ns, > 200mA (Io) and a current, reverse leakage @ vr of 100 µA @ 650 V. This part has a typical lead time of 0 Days from factory. You can source VS-C20ET07T-M3 through Simplytronix, with fast shipping and verified authenticity.
