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| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 16A, 10V, 3.7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 975pF @ 10V, 2525pF @ 10V |
| Power - Max | 27W (Tc), 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 55 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
SQJ200EP-T1_JE3 is a mosfets manufactured by Vishay Semiconductors. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 20A (Tc), 60A (Tc) and a rds on (max) @ id, vgs of 8.8mOhm @ 16A, 10V, 3.7mOhm @ 20A, 10V. This part has a typical lead time of 55 Days from factory and ships with a full manufacturer datasheet available for download. Order SQJ200EP-T1_JE3 from Simplytronix for authenticated stock and same-day order processing.
