*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.57A (Tc), 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V, 3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.67W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 3000 |
5,545
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 148 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
SQ3585CEV-T1_GE3 is a mosfets manufactured by Vishay Semiconductors. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel, a FET feature of -, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 3.57A (Tc), 2.5A (Tc) and a rds on (max) @ id, vgs of 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V. This part has a typical lead time of 148 Days from factory. Simplytronix stocks SQ3585CEV-T1_GE3 for same-day shipping with genuine parts guaranteed.
