*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 28.1A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 15V |
| Power - Max | 3.8W (Ta), 48.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 12-PowerPair™ |
| Supplier Device Package | PowerPAIR® 3x3FS |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,155
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Vishay Semiconductors, the SIZF5302DT-T1-RE3 is classified as a mosfets. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 28.1A (Ta), 100A (Tc) and a rds on (max) @ id, vgs of 3.2mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SIZF5302DT-T1-RE3 from Simplytronix for authenticated stock and same-day order processing.
