*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V, 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V, 1600pF @ 15V |
| Power - Max | 4.3W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (3.3x3.3) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,141
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Vishay Semiconductors, the SIZ200DT-T1-GE3 is classified as a mosfets. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) and a rds on (max) @ id, vgs of 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SIZ200DT-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
