*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 108A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 15V |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SCD |
| Supplier Device Package | PowerPAK® 1212-8SCD |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,361
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Vishay Semiconductors's SISF04DN-T1-GE3 is a widely used mosfets in electronic designs. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual) Common Drain, a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 30A (Ta), 108A (Tc) and a rds on (max) @ id, vgs of 4mOhm @ 7A, 10V. This part has a typical lead time of 0 Days from factory. You can source SISF04DN-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.
