*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 75 V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
| Package / Case | PowerPAK® 1212-8S |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,165
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 42 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
The SIS888DN-T1-GE3 from Vishay Semiconductors falls under the mosfets category. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 150 V, a current, continuous drain (id) @ 25°C of 20.2A (Tc), a drive voltage of 7.5V, 10V and a rds on (max) @ id, vgs of 58mOhm @ 10A, 10V. This part has a typical lead time of 42 Days from factory and ships with a full manufacturer datasheet available for download. You can source SIS888DN-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.
