Similar Products
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta), 373A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7655 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 333W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 85 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SIRS4600EPW-T1-RE3 from Vishay Semiconductors falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 65A (Ta), 373A (Tc), a drive voltage of 7.5V, 10V and a rds on (max) @ id, vgs of 1.15mOhm @ 20A, 10V. This part has a typical lead time of 85 Days from factory and ships with a full manufacturer datasheet available for download. Order SIRS4600EPW-T1-RE3 from Simplytronix for authenticated stock and same-day order processing.
