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SIRA10DDP-T1-UE3

MOSFETs N-CHANNEL 30-V (D-S) MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 15 V
Power Dissipation (Max) 5W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Product Attributes
Packaging
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,559
In Stock
Packaging:
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHS
LifecycleNew Product
Reported Lead Time 92 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
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