*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2772 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
📦
Product Attributes
| Packaging | |
| Standard Pack Qty | 500 |
9,387
Units In Stock
📦
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 154 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
SIHG110N65SF-GE3 is a mosfets manufactured by Vishay Semiconductors. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 33A (Tj), a drive voltage of 10V and a rds on (max) @ id, vgs of 115mOhm @ 17.5A, 10V. This part has a typical lead time of 154 Days from factory. Simplytronix carries SIHG110N65SF-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
